Yuri Erokhin
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Historial de carrera de Yuri Erokhin
Antiguos cargos conocidos de Yuri Erokhin.
| Empresas | Cargo | Inicio | Fin |
|---|---|---|---|
| IPG PHOTONICS CORPORATION | Corporate Officer/Principal | 01/03/2013 | - |
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Corporate Officer/Principal | - | - |
Formación de Yuri Erokhin.
| Moscow Institute of Physics & Technology | Graduate Degree |
| Russian Academy of Sciences | Doctorate Degree |
Estadísticas
Internacional
| Estados Unidos | 3 |
| Rusia | 3 |
Operativa
| Corporate Officer/Principal | 2 |
| Graduate Degree | 1 |
| Doctorate Degree | 1 |
Sectorial
| Electronic Technology | 3 |
| Consumer Services | 3 |
Funciones ocupadas
Activas
Inactivas
Empresas cotizadas
Empresas privadas
Empresas relacionadas
| Empresas cotizadas | 1 |
|---|---|
| IPG PHOTONICS CORPORATION | Electronic Technology |
| Empresas privadas | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |
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