Relaciones activas
| Nombre | Sexo | Edad | Empresas relacionadas | Colaboración |
|---|---|---|---|---|
| Jr-Tai Chen | M | - |
SweGaN AB
 SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | 10 años |
| David Lam | M | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
| Walter Wohlmuth | M | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
| Richard Weil | M | 55 |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | 4 años |
| Inga Bergström | F | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
| Fred Chang | M | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
Gráfico relacional
Relaciones con varias empresas
Estadísticas
| País | Relaciones | % del total |
|---|---|---|
| Suecia | 6 | 100.00% |
Antigüedad de la relación
Activas
Pasados
Hombre
Mujer
Administradores
Ejecutivos
Origen de las relaciones
- Bolsa de valores
- Insiders
- Henrik Tölander
- Red Personal
